MTC300A 可控硅模块说明书

产品规格书

Specification of Products

产品名称：产品型号：

普通晶闸管模块湖北梅兰半导体有限公司

湖北梅兰半导体有限公司

Hubei Merlin Semiconductor Co., Ltd.

厂址：湖北省　襄阳市　高新技术开发区

电话：总机

传真：分机E-mail:mlsanrex@

(710)3807852 3807952 3807905 3806705811

版本号：02 更新日期：2011.3

MTC(MTA MTK)300A

（高压系列）

3

2

1

VALUE

SYMBOL CHARACTERISTIC TEST CONDITIONS T j(°C)

Min Type Max

UNIT

I T(AV)Mean on-state current

180°half sine wave50Hz

Single side cooled,T c=85°C

125300A

I T(RMS)RMS on-state current Single side cooled,T c=85°C125314A

V DRM

V RRM

Repetitive peak off-state voltage

Repetitive peak reverse voltage

V DRM&V RRM tp=10ms

V DsM&V RsM= V DRM&V RRM+200V

respectively

12525005600V

I DRM

I RRM

Repetitive peak current

at V DRM

at V RRM

12550mA

I TSM Surge on-state current9.3.KA

I2t I2T for fusing coordination

10ms half sine wave

V R=60%V RRM

125

432A2s*103 V TO Threshold voltage 1.15

. V r T On-state slop resistance

125

0.95

.mΩV TM Peak on-state voltage I TM=1500A1252.44V dv/dt

Critical rate of rise of off-state

voltage

V DM=67%V DRM125800V/μs di/dt

Critical rate of rise of on-state

current

From67%V DRM

to1500A, Gate source1.5A

t r≤0.5μs Repetitive

125100A/μs

I GT Gate trigger current30200mA

V GT Gate trigger voltage1.03.0V

I H Holding current

V A=12V, I A=1A25

20150mA V GD Non-trigger gate voltage At67%V DRM1250.2V R th(j-c)

Thermal resistance

Junction to heatsink

At1800sine, Single side cooled0.065°C /W V iso Isolation voltage50Hz,R.M.S,t=1min,I iso:1mA(MAX) 6000V Thermal connection torque(M10) 12.0N.m

F m

Mounting torque(M6) 6.0N.m T stg Stored temperature-40140°C W t Weight1350g Outline

OUTLINE DRAWING & CIRCUIT DIAGRAM

M10M13M14M15

Fig.1通态伏安特性曲线

Fig.2 结至管壳瞬态热阻抗曲线

Fig.3最大功耗与平均电流关系曲线

Fig.4管壳温度与通态平均电流关系曲线

Fig.5 最大功耗与平均电流关系曲线Fig.6 管壳温度与通态平均电流关系曲线

Fig.7 通态浪涌电流与周波数的关系曲线

Fig.8 I 2

t 特性曲线

Fig.9 门极功率曲线Fig.10 门极触发特性曲线

M14M13

Outside Dimension

M10

M15