MMBT3904SL贴片三极管 SOT-923三极管封装MMBT3904SL参数
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京南山半导体有限公司 — 长电贴片三极管选型资料】
CLASSIFICATION OF hFE Rank Range O 100-200 Y 200-300
D,May,2013
【 南京南山半导体有限公司 — 长电三极管选型资料】
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
The bottom gasket
Label on the Reel 8000×15 PCS 8000×1 PCS
The top gasket Stamp “EMPTY” on the empty box Seal the box with the tape
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210 mm× 208mm× 203mm
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-923 Plastic-Encapsulate Transistors
MMBT3904SL
FEATURES Complementary to MMBT3906SL MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1
TRANSISTOR (NPN)
SOT–923
3
1. BASE 2. EMITTER 3. COLLECTOR
2
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO Test conditions IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=30V, VBE(off)=3.0V VEB=5V, IC=0 VCE=1V, IC=0.1mA VCE=1V, IC=1mA DC current gain hFE VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=20V,IC=10mA , f=100MHz VCB=5V, IE=0, f=1MHz VEB=0.5V, IE=0, f=1MHz VCC=3V, IC=10mA, IB1= IB2=1mA 300 6 15 35 35 200 0.65 40 70 100 60 30 0.2 0.3 0.85 0.95 V V V V MHz pF pF ns ns ns 300 Min 60 40 6 100 50 100 Typ Max Unit V V V nA nA nA
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 60 40 6 200 100 1250 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃
Base-emitter saturation voltage Transition frequency Collector output capacitance Collector output capacitance Delay time Rise time Storage time
VBE(sat) fT Cob Cib td tr ts
Dimensions In Inches Min. Max. 0.014 0.017 0.000 0.002 0.004 0.009 0.007 0.011 0.006 0.022 0.026 0.035 0.043 0.030 0.033 0.014TYP. 7° REF.
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
Symbol A A1 b b1 c D E E1 e θ
Dimensions In Millimeters Min. Max. 0.350 0.430 0.000 0.050 0.100 0.220 0.170 0.270 0.150 0.550 0.650 0.900 1.100 0.750 0.850 0.350TYP. 7° REF.
Label on the Outer Box Outer Box: 440 mm× 440mm× 230mm
CLASSIFICATION OF hFE Rank Range O 100-200 Y 200-300
D,May,2013
【 南京南山半导体有限公司 — 长电三极管选型资料】
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
The bottom gasket
Label on the Reel 8000×15 PCS 8000×1 PCS
The top gasket Stamp “EMPTY” on the empty box Seal the box with the tape
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210 mm× 208mm× 203mm
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-923 Plastic-Encapsulate Transistors
MMBT3904SL
FEATURES Complementary to MMBT3906SL MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1
TRANSISTOR (NPN)
SOT–923
3
1. BASE 2. EMITTER 3. COLLECTOR
2
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO Test conditions IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=30V, VBE(off)=3.0V VEB=5V, IC=0 VCE=1V, IC=0.1mA VCE=1V, IC=1mA DC current gain hFE VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=20V,IC=10mA , f=100MHz VCB=5V, IE=0, f=1MHz VEB=0.5V, IE=0, f=1MHz VCC=3V, IC=10mA, IB1= IB2=1mA 300 6 15 35 35 200 0.65 40 70 100 60 30 0.2 0.3 0.85 0.95 V V V V MHz pF pF ns ns ns 300 Min 60 40 6 100 50 100 Typ Max Unit V V V nA nA nA
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 60 40 6 200 100 1250 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃
Base-emitter saturation voltage Transition frequency Collector output capacitance Collector output capacitance Delay time Rise time Storage time
VBE(sat) fT Cob Cib td tr ts
Dimensions In Inches Min. Max. 0.014 0.017 0.000 0.002 0.004 0.009 0.007 0.011 0.006 0.022 0.026 0.035 0.043 0.030 0.033 0.014TYP. 7° REF.
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
Symbol A A1 b b1 c D E E1 e θ
Dimensions In Millimeters Min. Max. 0.350 0.430 0.000 0.050 0.100 0.220 0.170 0.270 0.150 0.550 0.650 0.900 1.100 0.750 0.850 0.350TYP. 7° REF.
Label on the Outer Box Outer Box: 440 mm× 440mm× 230mm