2N7002中文资料 - 360文档中心

2n7002场效应管参数

2n7002场效应管参数
2N7002场效应管是一种n型的单沟道场效应管，它拥有较高的电流放大系数(直接电压控制,Vgs只需覂数伏)、低栅极耗散、低Vth抗噪声能力好，放大增益Gm高、低的死区时间，高的速度特性，非常适合低功耗、高速CMOS/TTL/BiCMOS集成电路输出级电路。

2N7002 场效应管参数包括：
1、最大额定电压：Vdss= 20 V
2、栅极电压：VGS(off) = ±8 V
3、栅极电流：Igss = ±200 nA
4、Drain-Source 最小电压：Vds(min) = 1.5 V
5、无功耗损耗：Pd = 360 mW
6、最大集电极电流：Id = -200 mA
7、最大瞬态电流：Ipp = 500 mA
8、栅极电压：Vgs(min) = 0 V
9、Drain-Source 最大电压：Vds(max) = 20 V
10、集电极电流：Id (on) = -200 mA
11、最小集电极电压：Vds(on) = 1.5 V
12、放大增益：Gm = 10 mS
13、栅极电流：Ig(off) = ±200 nA
14、Gate-Source最大电压：Vgs(max) = ±8 V
15、Gate-Source 电势：Vgs(on) = -4 V
16、Drain-Source 电势：Vds(on) = 10 V。

2N7002中文资料大全

2N7002中文资料大全
描述：
晶体管极性:N沟道
漏极电流, Id 最大值:280mA
电压, Vds 最大:60V
开态电阻, Rds(on):5ohm
电压 @ Rds测量:10V
电压, Vgs 最高:2.1V
功耗:0.2W
工作温度范围:-55to 150
封装类型:SOT-23
针脚数:3
SVHC(温度关注物质):Cobalt dichloride (18-Jun-2010) SMD标号:702
功率, Pd:0.2W
外宽:3.05mm
外部深度:2.5mm
外部长度/高度:1.12mm
封装类型:SOT-23
带子宽度:8mm
晶体管数:1
晶体管类型:MOSFET
温度 @ 电流测量:25°C
满功率温度:25°C
电压 Vgs @ Rds on 测量:10V
电压, Vds 典型值:60V
电流, Id 连续:0.115A
电流, Idm 脉冲:0.8A
表面安装器件:表面安装
通态电阻, Rds on @ Vgs = 10V:5ohm
通态电阻, Rds on @ Vgs = 4.5V:5.3ohm
阈值电压, Vgs th 典型值:2.1V
阈值电压, Vgs th 最高:2.5V
SVHC(高度关注物质)(附加):Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)。

电源控制芯片2N7002资料

FeaturesFree from secondary breakdown Low power drive requirement Ease of parallelingLow C ISS and fast switching speeds Excellent thermal stability Integral source-drain diodeHigh input impedance and high gainComplementary N- and P-Channel devicesApplicationsMotor controls Converters Ampliﬁers SwitchesPower supply circuitsDrivers (relays, hammers, solenoids, lamps,memories, displays, bipolar transistors, etc.)►►►►►►►►►►►►►►General DescriptionThe Supertex 2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefﬁcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switchingspeeds are desired.Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. Allvoltages are referenced to device ground.* Distance of 1.6mm from case for 10 seconds.Pin ConﬁgurationN-Channel Enhancement-Mode Vertical DMOS FETs-G indicates package is RoHS compliant (‘Green’)Product MarkingW = Code for week sealed = “Green” Packaging DRAINSOURCEGATETO-236AB (SOT-23)TO-236AB (SOT-23)All D.C. parameters 100% tested at 25O C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)All A.C. parameters sample tested.1.2.Switching Waveforms and Test CircuitNotes:† ID(continuous) is limited by max rated Tj.OUTPUT INPUTOUTPUT10VV DD0V0VTypical Performance CurvesOutput Characteristics2.01.61.20.80.4I D )s e r e p m a ( Saturation Characteristics0.11001011.00.10.010.001V DS (volts)I D )s e r e p m a (0.001100.010.1 1.0t p (seconds)0.50.40.30.20.10G S F )s n e m e i s (4V 3V7V 9V8V6V 5VTypical Performance Curves (cont.)Q G (nanocoulombs))N O (S D R )d e z i l a m r o n (On-Resistance vs. Drain CurrentV B S S D )d e z i l a m r o n (I D )s e r e p m a ( )s d a r a f o c i p ( C V DS (volts)BV DSS Variation with Temperature102030400.20.40.60.8 1.02.01.61.20.80.4Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//.©2008 All rights reserved. Unauthorized use or reproduction is prohibited.1235 Bordeaux Drive, Sunnyvale, CA 94089(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline information go to /packaging.html .)3-Lead TO-236AB (SOT-23) Package Outline (K1)2.90x1.30mm body, 1.12mm height (max), 1.90mm pitchJEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.† This dimension is a non-JEDEC dimension.Drawings not to scale.Supertex Doc.#:DSPD-3TO236ABK1, Version B072208.View BView A - ATop View。

2N7002 长电三极管

V(BR)DSS Vth(GS) lGSS IDSS ID(ON)
Drain-Source On-Resistance
RDS(on)
Forward Trans conductance
gfs
Drain-source on-voltage
VDS(on)
Diode Forward Voltage Input Capacitance * Output Capacitance * Reverse Transfer Capacitance *
VGS=10V,9V,8V,7V,6V,5V
0.6
VGS=4Vቤተ መጻሕፍቲ ባይዱ
0.4
0.2
0.0 0
VGS=3V
1
2
3
4
DRAIN TO SOURCE VOLTAGE VDS (V)
VGS=2V
5
R DS(ON)
N——
I
D
8
Ta=25℃ Pulsed
6
VGS=5V
4
VGS=10V
2
0
0.0
0.2
0.4
0.6
0.8
1.0
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Marking: 7002
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
60
Continuous Drain Current
C,Oct,2011
1.0
Ta=25℃ Pulsed

2N7002中文资料(Diodes)中文数据手册「EasyDatasheet - 矽搜」

反向传输电容
(2)
C
5
pF
导通时间（2）（3）
t
关闭时间（2）（3）
t
20 ns V 30V, I =200mA 20 ns R =25Ω, R =150Ω
（1）脉冲条件下进行测定.宽度=300μS.占空比（3）开关时间测量50Ω源阻抗和5ns上升时间脉冲发生器
辣妹参数数据可应要求提供该设备
2% （2）抽样检测.
门 - 体泄漏
零栅压漏当前
I
10 nA V =± 20V, V =0V
I
1
µA V =48V, V =0V
500 µA V =48V, V =0V, T=125°C (2)
通态漏电流（1）
I
500
mA V =25V, V =10V
静态漏源通态
电压（1）
V
3.75 V V =10V, I =500mA
芯片中文手册,看全文,戳
SOT23 N沟道增强模式垂直DMOS FET
ISSUE 4 – 2006年 4月
特征
* 60电压V CEO
PARTMARKING详细信息 - 702
2N7002
S D
G
绝对最大额定值.
SOT23
参数
符号
VALUE
UNIT
漏源电压
V
60
V
连续漏极电流在T
=25°C
I
115
mA
漏电流脉冲
I
800
mA
门源电压
V
± 40
V
在T功率耗散
=25°C
P
330
mW
工作和存储温度范围
T :T

2N7002-AE3-R资料

UNISONIC TECHNOLOGIES CO.,2N7002MOSFETN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORDESCRIPTIONThe UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applicationsFEATURES* High density cell design for low R DS(ON). * Voltage controlled small signal switch * Rugged and reliable * High saturation current capabilityMARKING*Pb-free plating product number: 2N7002LPIN CONFIGURATIONPIN NO.PIN NAME1 SOURCE2 GATE3 DRAINORDERING INFORMATIONOrder NumberNormal Lead free Package Packing2N7002-AE3-R 2N7002L-AE3-R SOT-23 Tape ReelABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.)PARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 60 V Drain-Gate Voltage (R GS ≤1M Ω) V DGR 60 V Continuous ±20Gate Source Voltage Non Repetitive(tp<50µs)V GSS±40 V Continuous 115Maximum Drain Current Pulsed I D 800mA Maximum Power DissipationDerated above 25°CP D200 1.6 mW mW/°C Operating Temperature T OPR 0 ~ +70 °CStorage Temperature T STG -40 ~ +150THERMAL CHARACTERISTICSPARAMETER SYMBOL RATINGS UNITThermal Resistance, Junction to Ambient θJA 625 °C/WELECTRICAL CHARACTERISTICS (T A =25°C, unless otherwise specified.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICSDrain-Source Breakdown Voltage BV DSS V GS =0V, I D =10µA 60 V0.5 mAZero Gate Voltage Drain Current I DSSV DS =60V, V GS =0V T J =125°C 1 µAGate-Body leakage, Forward I GSSF V GS =20V, V DS =0V 100 nA Gate-Body leakage Reverse I GSSR V GS =-20V, V DS =0V -100nA ON CHARACTERISTICS (Note) Gate Threshold Voltage V GS (th) V GS = V DS , I D =250µA 1 2.1 2.5 VV GS = 10V, I D =500mA 0.6 3.75Drain-Source On-Voltage V DS (ON) V GS = 5.0V, I D =50mA 0.09 1.5VOn-State Drain Current I D(ON) V GS =10V,V DS ≥2V DS(ON) 500 2700 mAV GS =10V, I D =500mAT J =100°C1.2 1.7 7.5 13.5Ω Static Drain-Source On-Resistance R DS (ON)V GS =5.0V, I D =50mAT J =100°C1.72.4 7.5 13.5 Forward Transconductance g FS V DS ≥2V DS(ON), I D =200mA 80 320 mS DYNAMIC CHARACTERISTICS Input Capacitance C iss V DS =25V,V GS =0V,f =1.0MHz 20 50 pF Output Capacitance C oss 11 25 pF Reverse Transfer Capacitance C rss 4 5 pFTurn-On Time t ONV DD =30V, R L =150ΩI D =200mA, V GS =10V R GEN =25Ω20 nS Turn-Off Time t OFFV DD =30V, R L =25ΩI D =200mA, V GS =10V R GEN =25Ω20 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS =0V, Is=115mA (Note ) 0.88 1.5 VMaximum Pulsed Drain-Source DiodeForward CurrentI SM 0.8 AMaximum Continuous Drain-SourceDiode Forward CurrentIs 115 mANote: Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2.0%TEST CIRCUIT AND WAVEFORMFigure 1V DDV OUTFigure 2. Switching WaveformsTYPICAL CHARACTERICS543211.510.50221.61.20.80.432.521.5100.5D R A I N -S O U R CE C U R R E N T , I D (A )DRAIN -SOURCE VOLTAGE, V DS (V)Figure 3. On-Region CharacteristicsN O R M A L I Z E D D R A I N –S O U R C E O N –R E S I S T A N C E , R D S (O N )DRAIN CURRENT , I D (A)Figure 4. On-Resistance Varisation with GateVoltage and Drain Current100750-2521.51-500.51.61.20.80.432.521.5100.525501501250.751.251.7520N O R M A L I Z E D D R A I N -S O U R C E O N -R E S I S T A N C E , R D S (O N )JUCTION TEMPERATURE, T J (°C)Figure 5. On-Resistance Varisationwith TemperatureN O R M A L I Z E D D R A I N -S O U R C E O N -R E S I S T A N C E , R DS (O N )DRAIN CURRENT ,I D (A)Figure 6. On-Resistance Varisation with DrainCurrent and Temperature10864210075-25-5025501251.61.21.80.4201501.11.0510.950.90.850.8D R A I N C U R R E N T , I D (A )GATE TO SOURCE VOLTAGE , V GS (V)Figure 7. Transfer CharacteristicsN O R M A L I Z E D G A T E -S O U R C E T H R E S H O L D V O L T A G E , V t hJUCTION TEMPERATURE, T J (°C)Figure 8. Gate Threshold Varisationwith TemperatureTYPICAL CHARACTERICS (cont.)10075-251.11.051-500.9251 1.20.80.410.50.10.050.010.20.00525501501250.951.0251.0751.40.0010.9750.62N O R M A L I Z E D D R A I N -S O U R C E V R E A K D O W N V O L T A G E , B V D S SJUCTION TEMPERATURE, T J (°C)Figure 9. Breakdown Voltage Varisationwith TemperatureBODY DIODE FORWARD VOLTAGE , V SD (V)Figure 10. Body Diode Forward Voltage Varisationwith TemperatureR E V E R S E D R A I N C U R R E N T , I S (A )1102053220.80.41.21.6205102401503060C A P A C I T A N C E (p F )DRAIN TO SOURCE VOLTAGE, V DS (V)Figure 11. Capacitance CharacteristicsGATE CHARGE, Qg (nC)Figure 12. Gate Charge Characteristics60801020520.50.050.10.0110.00530231D R A I N C U R RE N T , I D (A )DRAIN TO SOURCE VOLTAGE, V DS (V)Figure 13. Maximum Safe Operating Area3000.001101t1, TIME (sec)10010.10.010.0010.00010.0020.010.050.10.20.5Figure 14. Transient Thermal Response CurveN O R M A L I Z E D E F F E C T I V E T R A N S I E N T T H E R M A L R E S I S T A N C E , r (t )。

2N7002资料

1.Product profile1.1General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.1.2Features and benefits⏹Suitable for logic level gate drive sources ⏹Very fast switching⏹Surface-mounted package ⏹Trench MOSFET technology1.3Applications⏹Logic level translators⏹High-speed line drivers1.4Quick reference data2.Pinning information2N700260 V, 300 mA N-channel Trench MOSFETRev. 7 — 8 September 2011Product data sheetTable 1.Quick reference dataSymbol ParameterConditions Min Typ Max Unit V DS drain-source voltage 25°C ≤T j ≤150°C--60V I D drain currentV GS =10V; T sp =25°C;see Figure 1; see Figure 3--300mA P tot total power dissipation T sp =25°C;see Figure 2--0.83W Static characteristicsR DSondrain-source on-state resistanceV GS =10V; I D =500mA; T j =25°C; see Figure 6; see Figure 8- 2.85ΩTable 2.Pinning information Pin Symbol Description Simplified outlineGraphic symbol1G gate SOT23 (TO-236AB)2S source 3Ddrain1233.Ordering information4.Marking[1]% = placeholder for manufacturing site code5.Limiting valuesTable 3.Ordering informationType numberPackage NameDescriptionVersion 2N7002TO-236ABplastic surface-mounted package; 3 leadsSOT23Table 4.Marking codesType numberMarking code [1]2N700212%Table 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit V DS drain-source voltage 25°C ≤T j ≤150°C-60V V DGR drain-gate voltage 25°C ≤T j ≤150°C; R GS =20k Ω-60V V GS gate-source voltage -3030V V GSM peak gate-source voltage pulsed; t p ≤50µs; δ=0.25-4040V I Ddrain currentV GS =10V; T sp =25°C;see Figure 1; see Figure 3-300mA V GS =10V; T sp =100°C; see Figure 1-190mA I DM peak drain current pulsed; t p ≤10µs; T sp =25°C;see Figure 3- 1.2A P tot total power dissipation T sp =25°C;see Figure 2-0.83W T j junction temperature -65150°C T stg storage temperature -65150°C Source-drain diodeI S source current T sp =25°C-300mA I SMpeak source currentpulsed; t p ≤10µs; T sp =25°C - 1.2A6.Thermal characteristicsTable 6.Thermal characteristicsSymbol Parameter ConditionsMin Typ Max Unit R th(j-a)thermal resistance from junction to ambientMounted on a printed-circuit board; minimum footprint ; vertical in still air--350K/WR th(j-sp)thermal resistance from junction to solder pointsee Figure 4--150K/W7.CharacteristicsTable 7.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-sourcebreakdown voltage I D=10µA; V GS=0V; T j=25°C60--V I D=10µA; V GS=0V; T j=-55°C55--VV GSth gate-source thresholdvoltage I D=0.25mA;V DS=V GS; T j=25°C;see Figure 9; see Figure 1012 2.5VI D=0.25mA;V DS=V GS; T j=150°C;see Figure 9; see Figure 100.6--VI D=0.25mA;V DS=V GS; T j=-55°C;see Figure 9; see Figure 10-- 2.75VI DSS drain leakage current V DS=48V;V GS=0V; T j=25°C-0.011µAV DS=48V;V GS=0V; T j=150°C--10µA I GSS gate leakage current V GS=15V; V DS=0V; T j=25°C-10100nAV GS=-15V;V DS=0V; T j=25°C-10100nAR DSon drain-source on-stateresistance V GS=10V; I D=500mA; T j=25°C;see Figure 6; see Figure 8- 2.85ΩV GS=10V; I D=500mA; T j=150°C;see Figure 6; see Figure 8--9.25ΩV GS=4.5V;I D=75mA;T j=25°C;seeFigure 6; see Figure 8- 3.8 5.3ΩDynamic characteristicsC iss input capacitance V DS=10V;f=1MHz;V GS=0V;T j=25°C -3150pFC oss output capacitance- 6.830pF C rss reverse transfercapacitance- 3.510pFt on turn-on time V GS=10V; V DS=50V;R L=250Ω;R G(ext)=50Ω; R GS=50Ω- 2.510nst off turn-off time-1115ns Source-drain diodeV SD source-drain voltage I S=300mA;V GS=0V;T j=25°C;seeFigure 11-0.85 1.5VQ r recovered charge V GS=0V;I S=300mA;dI S/dt=-100A/µs -30-nCt rr reverse recovery time-30-ns8.Package outlinePlastic surface-mounted package; 3 leads SOT23Fig 13.Package outline SOT23 (TO-236AB)9.Soldering10.Revision historyTable 8.Revision historyDocument ID Release date Data sheet status Change notice Supersedes2N7002 v.720110908Product data sheet-2N7002 v.6 Modifications:•The format of this data sheet has been redesigned to comply with the new identity guidelinesof NXP Semiconductors.•Legal texts have been adapted to the new company name where appropriate.2N7002 v.620060428Product data sheet2N7002 v.52N7002 v.520051115Product data sheet2N7002 v.42N7002 v.420050426Product data sheet2N7002 v.32N7002 v.320000727Product specification HZG3362N7002 v.22N7002 v.219970617Product specification2N7002 v.12N7002 v.119901031Product specification--11.Legal information11.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term 'short data sheet' is explained in section "Definitions".[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest productstatus information is available on the Internet at URL .11.2DefinitionsPreview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.11.3DisclaimersLimited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third partycustomer(s). NXP does not accept any liability in this respect.Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.Document status [1][2] Product status [3] DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheet Production This document contains the product specification.Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use ofnon-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation.12.Contact informationFor more information, please visit: For sales office addresses, please send an email to: salesaddresses@13.Contents1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .11.1General description . . . . . . . . . . . . . . . . . . . . . .11.2Features and benefits. . . . . . . . . . . . . . . . . . . . .11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4Quick reference data . . . . . . . . . . . . . . . . . . . . .12Pinning information. . . . . . . . . . . . . . . . . . . . . . .13Ordering information. . . . . . . . . . . . . . . . . . . . . .24Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .26Thermal characteristics . . . . . . . . . . . . . . . . . . .47Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .58Package outline. . . . . . . . . . . . . . . . . . . . . . . . . .89Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .910Revision history. . . . . . . . . . . . . . . . . . . . . . . . .1011Legal information. . . . . . . . . . . . . . . . . . . . . . . .1111.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . .1111.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .1111.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .1111.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .1212Contact information. . . . . . . . . . . . . . . . . . . . . .12Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V.2011.All rights reserved.For more information, please visit: For sales office addresses, please send an email to: salesaddresses@。

2N7002

.
SOT-23 封装半导体场效应管/SOT-23 Plastic-Encapsulate MOSFETS
2N7002 MOSFET( N-Channel )
印章/MARKING: 7002 特点/Features：
1、控制触发灵敏； 2、维持电流低；用途/Applications：用于一般开关和相位电路。
1.2 V
50 pF
25
20 ns
40 ns
400
ns
Tstg
-55~150
℃
电性能参数/Electrical characteristics (Ta=25℃)
参数
符号
测试条件
最小值典型值最大值单位
源极-漏极击穿电压栅极开启电压栅极漏电流
零栅压漏极电流漏极导通电流
漏极源极导通电阻
正向跨导
漏极-源极导通电压
二极管正向压降输入电容输出电容开启时间关闭时间
SOT-23
1.GATE 2.SOURCE 3.DRAIN
极限参数/Absolute maximum ratings(Ta=25℃)
参数/Parameter
符号/ Symbol 数值/Value 单位/Unit
源极-漏极电压/Drai流（持续）/Continuous Drain Current
ID
耗散功率/Power Dissipation
PD
热阻/ Thermal Resistance Junction to Ambient
RθJA
结温/Junction Temperature
Tj
60 0.115 0.225 556 150
V A W ℃/mW ℃
储存温度/Storage Temperature

2N7002中文资料_数据手册_参数

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2N7002P_1本文档提供的所有信息均受法律免责声明保护. ?恩智浦BV 2010.保留所有权利.产品数据表 2010年4月1日至19日 14 16恩智浦半导体 2N7002P 60 V，0.3 A N沟道沟槽式MOSFET 12.法律信息 12.1数据表状态 [1]请在启动或完成设计之前查阅近发布的文档. [2]术语“短数据表”在“定义”一节中进行了说明. [3]本文档中描述的设备的产品状态可能在本文档发布后发生变化，并且在多个设备的情况下可能会有所不同.新的产品状态有关信息可以在网址上找到 . 12.2定义草案 - 文件仅为草案版本.内容还在内部审查和正式批准，可能会导致修改或添加.恩智浦半导体不给任何陈述或保证的准确性或完整性信息包括在内，对后果不承担任何责任使用这些信息.简短的数据表 - 简短的数据表是完整数据表的摘要具有相同的产品型号和标题.一个简短的数据表是打算仅供快速参考，不应依赖于详细说明完整的信息.有关详细和完整的信息，请参阅相关的完整数据可通过当地恩智浦半导体销售部门索取办公室.如果与短数据表有任何不一致或冲突，应以完整的数据表为准.产品规格 - 产品中提供的信息和数据数据表应按照约定的方式定义产品的规格恩智浦半导体及其客户，除非恩智浦半导体和客户已经以书面形式明确表示同意.然而，在任何情况下，恩智浦半导体产品的协议应是有效的被视为提供了超出上述范围之外的功能和品质产品数据表. 12.3免责声明有限保修和责任 - 本文件中的信息被认为是准确可靠. 但是，恩智浦半导体并没有给予任何陈述或保证，明示或暗示，准确性或这些信息的完整性，对此不承担任何责任使用这些信息的后果.恩智浦半导体不对任何间接的，附带的，惩罚性的，特殊的或相应的损害赔偿（包括但不限于 - 损失利润，储蓄损失，业务中断，与搬迁有关的费用更换任何产品或返工费用）是否这样损害赔偿是基于侵权（包括疏忽），保修，违约恩智浦BV 2010.保留所有权利.产品数据表 2010年4月1日至19日 13的16恩智浦半导体 2N7002P 60 V，0.3 A N沟道沟槽式MOSFET 11.修订历史表8修订记录文档ID发布日期数据表状态变更通知取代版本 2N7002P_1 20100419产品数据表日至19日十六恩智浦半导体 2N7002P 60 V，0.3 A N沟道沟槽式MOSFET 8.测试信息图17.占空比定义 T 1 T 2 P ? 006AAA812占空比 δ= T 1 T 2 N沟道增强型场效应晶体管（FET）采用塑料封装 TRENCHMOS技术. 1.2特点 1.3应用 1.4快速参考数据 2.固定信息 2N7002F N沟道 TRENCHMOS FET 2006年4月3 - 28日产品数据表逻辑电平阈值兼容非常快速的切换 S 表面安装的包装 S的 TRENCHMOS技术 S 逻辑电平转换器 S 的高速线路驱动器 S V DS≤60 V S I D≤475 MA S R DSON≤2Ω S P TOT≤0.83 W表格1：钢钉销描述简化的轮廓符号 1 门（G） SOT23 2来源（S） 3排水（D） 12 3小号 D G MBB076

2N7002DW-TP;中文规格书,Datasheet资料

NOTE
* Pulse test, pulse width̰300s, duty cyclḛ20%
Revision: A
/

1 of 2
2011/01/01
MCC
TM
Micro Commercial Components
Ordering Information :
/

2 of 2
Revision: A
2011/01/01
分销商库存信息:
MICRO-COMMERICAL-CO 2N7002DW-TP
MCC
Micro Commercial Co 20736 Marilla Street Chatsworth !"# $
% !"#
2N7002DW
Switching
td(on) td(off) Turn-on Time Turn-off Time ----7 11 20 ns 20
DIM A B C D G H J K L M
MIN .006 .045 .085 .026 .047 .071 --.035 .010 .003
MAX .014 .053 .096 .055 .087 .004 .043 .018 .006
• • • • • • • •
Features
Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Power Dissipation: 0.2W(Tamb=25ć) Drain Current: 115mA Drain-source Voltage: 60V Operating Junction Temperature: -55 to +150к Storage Temperature: -55 to +150к Marking: K72

FOSAN富信电子 MOS管 2N7002-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N7002 SOT-2360V N Channel Enhancement沟道增强型MOS Field Effect Transistor场效应管▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位Drain-Source V oltage漏极-源极电压BV DSS60V Gate-Source Voltage栅极-源极电压V GS+20V Drain Current(continuous)漏极电流-连续I D（at T A=25°C）340mA Drain Current(pulsed)漏极电流-脉冲I DM 1.5A Total Device Dissipation总耗散功率P D(at T A=25°C)350mW Thermal Resistance Junction-Ambient热阻RΘJA357℃/W Junction/Storage Temperature结温/储存温度T J,T stg-55~150℃▉Device Marking产品字标2N7002=7002ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N7002▉Electrical Characteristics电特性(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic 特性参数Symbol符号Min最小值Typ典型值Max最大值Unit单位Drain-Source Breakdown Voltage漏极-源极击穿电压(I D=250uA,V GS=0V)BV DSS60——VGate Threshold Voltage栅极开启电压(I D=250uA,V GS=V DS)V GS(th)1 1.5 2.5VZero Gate Voltage Drain Current零栅压漏极电流(V GS=0V,V DS=60V)I DSS——1u AGate Body Leakage栅极漏电流(V GS=+20V,V DS=0V)I GSS——+100n AStatic Drain-Source On-State Resistance 静态漏源导通电阻(I D=300mA,V GS=10V) (I D=200mA,V GS=4.5V)R DS(ON)— 1.21.32.53.0ΩDiode Forward Voltage Drop内附二极管正向压降(I SD=300mA,V GS=0V)V SD—— 1.2V Input Capacitance输入电容(V GS=0V,V DS=30V,f=1MHz)C ISS—27.5—pF Common Source Output Capacitance共源输出电容(V GS=0V,V DS=30V,f=1MHz)C OSS— 2.75—pF Reverse Transfer Capacitance反馈电容(V GS=0V,V DS=30V,f=1MHz)C RSS— 1.9—pF Total Gate Charge栅极电荷密度(V DS=30V,I D=300mA,V GS=10V)Q g— 1.6—nC Gate Source Charge栅源电荷密度(V DS=30V,I D=300mA,V GS=10V)Q gs—0.47—nC Gate Drain Charge栅漏电荷密度(V DS=30V,I D=300mA,V GS=10V)Q gd—0.25—nC Turn-ON Delay Time开启延迟时间(V DS=30V I D=300mA,R GEN=6Ω,V GS=10V)t d(on)— 3.3—ns Turn-ON Rise Time开启上升时间(V DS=30V I D=300mA,R GEN=6Ω,V GS=10V)t r—19—ns Turn-OFF Delay Time关断延迟时间(V DS=30V I D=300mA,R GEN=6Ω,V GS=10V)t d(off)—9.6—ns Turn-OFF Fall Time关断下降时间(V DS=30V I D=300mA,R GEN=6Ω,V GS=10V)t f—49—nsANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N7002■Typical Characteristic Curve典型特性曲线Figure1:Output Characteristics Figure2:Transfer CharacteristicsFigure3:On-Resistance vs.Drain Current Figure4:Safe Operating AreaFigure5:Capacitance Characteristics Figure6:Gate-Charge Characteristics安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N7002▉Dimension外形封裝尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。

MEMORY存储芯片2N7002中文规格书

2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
D
D
S
G
1
TO-92
G
SOT-23
1. Source 2. Gate 3. Drain
(TO-236AB)
S
2N7002/NDS7002A
Ordering Information
Part Number
2N7000 2N7000-D74Z 2N7000-D75Z 2N7000-D26Z
2N7002 NDS7002A
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

2N7002DW;中文规格书,Datasheet资料

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor 1Marking : 2N12N7002DW — N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics T C= 25°C unless otherwise notedOff Characteristics (Note1)On Characteristics (Note1)Dynamic CharacteristicsSwitching CharacteristicsNote1 : Short duration test pulse used to minimize self-heating effect .Symbol Parameter Test Condition MIN TYP MAX UnitsBV DSS Drain-Source Breakdown Voltage V GS = 0V, I D =10uA6078-V I DSS Zero Gate Voltage Drain Current V DS = 60V, V GS = 0VV DS = 60V, V GS = 0V, @T C = 125°C -0.0017 1.0500uA I GSSGate-Body LeakageV GS = ±20V, V DS = 0V-0.2±10nAV GS(th)Gate Threshold VoltageV DS = V GS , I D = 250uA1.0 1.762.0V R DS(ON)Satic Drain-Source On-Resistance V GS = 5V, I D = 0.05A,V GS = 10V, I D = 0.5A, @T j = 125°C -- 1.62.537.513.5ΩI D(ON)On-State Drain Current V GS = 10V, V DS = 7.5V 0.5 1.43-A g FSForward TransconductanceV DS = 10V, I D = 0.2A80356.5-mSC iss Input Capacitance V DS = 25V, V GS = 0V, f = 1.0MHz-37.850pF C oss Output Capacitance-12.425pF C rssReverse Transfer Capacitance- 6.57.0pFt D(ON)Turn-On Delay Time V DD = 30V, I D = 0.2A, V GEN = 10V R L = 150Ω, R GEN = 25Ω- 5.8520nst D(OFF)Turn-Off Delay Time-12.5202N7002DW — N-Channel Enhancement Mode Field Effect Transistor2N7002DW — N-Channel Enhancement Mode Field Effect Transistor2N7002DW — N-Channel Enhancement Mode Field Effect TransistorTRADEMARKSThe following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use andis not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OFTHE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or(b) support or sustain life, and (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to resultin significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can be reasonablyexpected to cause the failure of the life support device orsystem, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsACEx®Build it Now™CorePLUS™CROSSVOLT™CTL™Current Transfer Logic™EcoSPARK®Fairchild®Fairchild Semiconductor®FACT Quiet Series™FACT®FAST®FastvCore™FPS™FRFET®Global Power Resource SMGreen FPS™Green FPS™ e-Series™GTO™i-Lo™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™Motion-SPM™OPTOLOGIC®OPTOPLANAR®®PDP-SPM™Power220®Power247®POWEREDGE®Power-SPM™PowerTrench®Programmable Active Droop™QFET®QS™QT Optoelectronics™Quiet Series™RapidConfigure™SMART START™SPM®STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™The Power Franchise®TinyBoost™TinyBuck™TinyLogic®TINYOPTO™TinyPower™TinyPWM™TinyWire™µSerDes™UHC®UniFET™VCX™Datasheet Identification Product Status DefinitionAdvance Information Formative or In DesignThis datasheet contains the design specifications for product development.Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to makechanges at any time without notice to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reservesthe right to make changes at any time without notice to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontin-ued by Fairchild semiconductor. The datasheet is printed for reference infor-mation only.Rev. I302N7002DW N-Channel Enhancement Mode Field Effect Transistor 2N7002DW分销商库存信息: FAIRCHILD2N7002DW。

2N7002中文资料_数据手册_参数

件编号：71333 S09-0857-REV. E，2009年5月18日 VISHAY SILICONIX 2N7002K典型征 25°C，除非另有说明源极 - 漏极二极管正向电压温度阈值电压方差 1.2 1.5 1 100 1000 0.0 0.3 0.6 0.9 T J = 125℃ V SD - 源极至漏极电压（V） 10 T J = - 55℃ V GS = 0V T J = 25℃ - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 I D = 250μA T J - 结温（°C）导通电阻与栅源电压的关系单脉冲功率，结到环境 0 1 2 3 4五 02468 10 V GS - 栅极 - 源极电压（V）我 D = 500毫安我 D = 200毫安 0.01 0 1 2.5 3 100 600 0.1时间（S） 1.5 2 0.5 1 10 T A = 25℃归一化热暂态阻抗，结到环境 10 10 -3 10 -2 1 10 600 10 -1 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02单脉冲占空比= 0.5方波脉冲持续时间（S） 1.工作周期D = 2.每单位基数= R THJA = 350℃/ W 3. T JM - T A = P DM Z THJA（T） T 1 T 2 T 1 T 2笔记： 4.表面安装 P D
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2N7002BK,215;中文规格书,Datasheet资料

Tamb = 25 °C;
-
single pulse; tp ≤ 10 μs
Version SOT23
Max Unit
60
V
±20
V
350
mA
245
mA
1.2
A
2N7002BK
Product data sheet
/
All information provided in this document is subject to legal disclaimers.
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 17 June 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2N7002BK
Product data sheet
/
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
Conditions
Min Typ Max Unit

2n7002导通条件

2n7002导通条件2N7002是一种常见的场效应管（MOSFET），具有导通和截止两种工作状态。

在导通状态下，2N7002的栅极电压高于阈值电压，使得栅极和漏极之间形成一条低阻抗路径，电流可以流过管子。

本文将从以下几个方面介绍2N7002导通的条件。

2N7002导通的第一个条件是栅极电压高于阈值电压。

阈值电压是指2N7002管子从截止到导通的临界电压，一般为2-4V。

当栅极电压高于阈值电压时，2N7002管子处于导通状态。

2N7002导通的第二个条件是漏极与源极之间的电压差。

当2N7002处于导通状态时，漏极电压与源极电压之差必须保持在一定的范围内，以确保管子正常导通。

这个范围可以根据具体应用来确定，一般为0.5-10V。

2N7002导通的第三个条件是栅极与源极之间的电压差。

当2N7002处于导通状态时，栅极与源极之间的电压差必须保持在一定的范围内，以确保管子正常导通。

这个范围也可以根据具体应用来确定，一般为0-10V。

2N7002导通的第四个条件是漏极电流。

漏极电流是指通过2N7002管子的电流，其大小取决于栅极电压、源极电压和漏极电压之间的关系。

当这些电压满足一定的条件时，漏极电流可以通过管子，使其处于导通状态。

2N7002导通的最后一个条件是温度。

温度是影响2N7002导通的重要因素之一。

在高温环境下，2N7002的导通特性可能会发生变化，进而影响其导通能力。

因此，在使用2N7002时，需要根据具体的工作温度来选择合适的导通条件。

2N7002导通的条件包括栅极电压高于阈值电压、漏极与源极之间的电压差、栅极与源极之间的电压差、漏极电流和温度。

只有满足这些条件，2N7002才能正常导通，发挥其应有的功能。

因此，在设计和应用电路时，需要注意2N7002导通条件的合理选择，以确保电路的正常工作。

2N7002VC-7资料

D G B C A
SOT-563 Dim A B C D G H SEE NOTE 1
K H M
Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10
Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18
Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20
Characteristic Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage (Note 2) Drain Current (Note 2) Drain Current (Note 2) Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
D2
S1
G1
ห้องสมุดไป่ตู้
AYK YM
G2 S2 D1
AYK = 2N7002VAC Product Type Marking Code (See Note 1) YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September
Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D
DS30639 Rev. 3 - 2

2n7002工作原理

2n7002工作原理
2N7002是一种N沟道MOSFET晶体管，其工作原理基于场效应。

当正电压施加到材料的漏极和栅极之间时，形成一个电场，使得栅极下方的开关区域中出现了一个导电通道。

这个导电通道连接了源极和漏极，允许电流在两者之间流动。

由于N沟道MOSFET的栅极是与主电路隔离的，因此它可以用来控制主电路中的电流。

在2N7002中，当施加负电压到栅极时，导电通道被关闭，电流无法通过主电路，因此2N7002变为一个开路。

而当施加正电压到栅极时，导电通道被打开，电流可以顺畅地通过主电路，从而2N7002变为一个闭合的开关。

2N7002常用于逻辑电路、驱动电路、直流电源等应用。

在使用时需要注意它的最大额定电压和电流，以避免损坏设备。

2N7002MTF_NL资料

ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™
Rev. C1
元器件交易网
2N7002MTF
Symbol BVDSS VGS(th) IGSS Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Min. 60 1.2 IDSS ID(ON) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance ② 0.5 0.08 500 5.0 50 25 5 20 20 ns pF A Ω S Typ. -
N-Channel Small Signal MOSFET
Electrical Characteristics (TC=25℃ unless otherwise specified)
Max. Units 2.5 100 nA -100 1.0 µA V V Test Condition VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = 20V VGS = -20V VGS = 40V VGS = 40V, TC = 125℃ VDS = 10V, VGS = 10V VGS = 10V, ID = 0.5A VDS = 15V, ID = 0.2A VDS = 25V, VGS = 0V, f = 1.0MHz

2n7002耗散功率

2n7002耗散功率2n7002是一种常见的场效应管，广泛应用于电子设备中。

耗散功率是指器件在工作过程中所消耗的功率，对于2n7002而言，耗散功率是一个重要的参数。

首先，我们来了解一下2n7002的基本特性。

2n7002是一种N沟道增强型场效应管，具有低电压驱动、低电流驱动和高开关速度等特点。

它的主要用途是作为开关管，用于控制电路的通断。

在电子设备中，2n7002常用于电源管理、电流控制、信号放大等方面。

对于2n7002而言，耗散功率是一个重要的参数。

耗散功率的大小直接影响到器件的工作温度和可靠性。

在正常工作状态下，2n7002的耗散功率应该在一定范围内，以保证器件的正常工作和长寿命。

那么，如何计算2n7002的耗散功率呢？首先，我们需要知道2n7002的工作电压和工作电流。

工作电压是指2n7002在工作过程中的电压，通常为正常工作电压和最大工作电压。

工作电流是指2n7002在工作过程中的电流，通常为正常工作电流和最大工作电流。

在计算耗散功率时，我们可以使用以下公式：耗散功率 = 工作电压×工作电流。

根据实际情况，我们可以选择正常工作电压和正常工作电流进行计算，以保证器件的正常工作。

除了计算耗散功率，我们还需要关注2n7002的散热问题。

由于耗散功率的存在，2n7002会产生一定的热量。

如果散热不良，会导致器件温度过高，从而影响器件的性能和寿命。

因此，在设计电路时，我们需要考虑散热措施，如合理布局散热片、增加散热风扇等，以保证2n7002的正常工作温度。

总之，2n7002的耗散功率是一个重要的参数，直接影响到器件的工作温度和可靠性。

在使用2n7002时，我们需要合理计算耗散功率，并采取相应的散热措施，以保证器件的正常工作和长寿命。

只有这样，我们才能充分发挥2n7002的性能，为电子设备的正常运行提供保障。