二输入与非门、或非门版图设计
模拟电路实验框架图
CD4046B锁相环CC4526B可预置二进制1/N计数器
CD4027双J-K触发器
附录常用数字集成电路引脚图
74LS00二输入与非门74LS01二输入与非门（OC）74LS02二输入或非门
74LS04六非门74LS10三输入与非门74LS20四输入与非门
74LS27三输入或非门74LS49 BCD七段译码器74LS74双D触发器
74LS73双JK触发器74LS86二输入异或门74LS90二-五进制计数器
74LS93四位二进制计数器74LS125四三态门74LS183双全加器
74LS138 3-8译码器74LS139双2-4译码器
74LБайду номын сангаас153二4选1数据选择器74LS163同步4位二进制计数器
74LS169 4位二进制可逆计数器74LS194 4位双向移位寄存器
74LS248带上拉BCD七段译码器74LS283四位全加器
二输入与非门、或非门版图设计
课程名称Course 集成电路设计技术项目名称Item二输入与非门、或非门版图设计与非门电路的版图：.spc文件（瞬时分析）：* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;* TDB File: E:\cmos\yufeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext * Extract Date and Time: 05/25/2011 - 10:03.include H:\ml2_125.mdVPower VDD GND 5va A GND PULSE (0 5 0 5n 5n 100n 200n)vb B GND PULSE (0 5 0 5n 5n 50n 100n).tran 1n 400n.print tran v(A) v(B) v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Pad Comment>* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6.5)* 4 = F (42.5,6.5)* 6 = GND (25,-22)M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u* M1 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u* M2 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)M3 F B 5 GND NMOS L=2u W=9.5u AD=52.25p PD=30u AS=57p PS=31u * M3 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)M4 5 A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=52.25p PS=30u * M4 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END与非门电路仿真波形图（瞬时分析）：.spc文件（直流分析）：* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;* TDB File: E:\cmos\yufeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext * Extract Date and Time: 05/25/2011 - 10:03.include H:\ml2_125.mdVPower VDD GND 5va A GND 5vb B GND 5.dc va 0 5 0.02 vb 0 5 0.02.print dc v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Pad Comment>* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6.5)* 4 = F (42.5,6.5)* 6 = GND (25,-22)M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u* M1 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u* M2 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)M3 F B 5 GND NMOS L=2u W=9.5u AD=52.25p PD=30u AS=57p PS=31u * M3 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)M4 5 A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=52.25p PS=30u * M4 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END与非门电路仿真波形图（直流分析）：或非门电路的版图：.spc文件（瞬时分析）：* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;* TDB File: E:\cmos\huofeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext * Extract Date and Time: 05/25/2011 - 10:04.include H:\CMOS\ml2_125.mdVPower VDD GND 5va A GND PULSE (0 5 0 5n 5n 100n 200n)vb B GND PULSE (0 5 0 5n 5n 50n 100n).tran 1n 400n.print tran v(A) v(B) v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <Pad Comment>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6)* 4 = F (42.5,6.5)* 5 = GND (25,-22)M1 6 A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=49.5p PS=29u* M1 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)M2 F B 6 VDD PMOS L=2u W=9u AD=49.5p PD=29u AS=54p PS=30u* M2 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)M3 F A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=104.5p PS=60u * M3 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)M4 GND B F GND NMOS L=2u W=9.5u AD=104.5p PD=60u AS=57p PS=31u * M4 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END或非门电路仿真波形图（瞬时分析）：.spc文件（直流分析）：* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;* TDB File: E:\cmos\huofeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext * Extract Date and Time: 05/25/2011 - 10:04.include H:\CMOS\ml2_125.mdVPower VDD GND 5va A GND 5vb B GND 5.dc va 0 5 0.02 vb 0 5 0.02.print dc v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <Pad Comment>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6)* 4 = F (42.5,6.5)* 5 = GND (25,-22)M1 6 A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=49.5p PS=29u* M1 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)M2 F B 6 VDD PMOS L=2u W=9u AD=49.5p PD=29u AS=54p PS=30u* M2 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)M3 F A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=104.5p PS=60u * M3 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)M4 GND B F GND NMOS L=2u W=9.5u AD=104.5p PD=60u AS=57p PS=31u * M4 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END或非门电路仿真波形图（直流分析）：内容（方法、步骤、要求或考核标准及所需工具、设备等）一、实训设备与工具1．PVI计算机一台；2．Tanner Pro集成电路设计软件二、实训方法、步骤与要求1．二输入与非门电路的线路结构2．二输入或非门电路的线路结构3．CMOS倒相器电路的版图4．根据与非门、或非门线路结构，在一个工程中，重新新建两个新CELL，分别对应与非门和或非门版图，并设计与非门、或非版图结构。
二输入端与非门设计.ppt
(6) 引入输入和输出脚：按步骤 (5) 选出2个输入脚
和1个输出脚。
第5章
组合逻辑电路设计
(7) 更 改 输 入 和 输 出 脚 的 脚 位 名 称 ： 在 PIN_NAME 处双击鼠标左键，进行更名，输入脚为A、 B，输出脚为C。
Edit画面，2输入端与非门的电路符号如图5-2所示。
第5章
组合逻辑电路设计
(14) 创建电路包含文件：选取窗口菜单 File→Create Default Include File，产生用来代表目前所 设计电路的nand2.inc文件，供其他VHDL编译时使用， 如图5-3所示。 (15) 时间分析：选取窗口菜单Utilities→Analyze
(2) 保存：选取窗口菜单 File→Save ，出现对话框，
键入文件名nand2.gdf，单击OK按钮。
第5章
组合逻辑电路设计
(3) 指定项目名称，要求与文件名相同：选取窗口
菜单File→Project→Name，键入文件名nand2，单击OK 按钮。
(4) 确定对象的输入位置：在图形窗口内单击鼠标
电路的nand2 .inc文件，供其他VHDL编译时使用。 (11) 时间分析：选取窗口菜单Utilities→Analyze
第5章
组合逻辑电路设计
(6) 保存并查错：选取窗口菜单
File→Project→Save&Check，即可针对电路文件进行检查。 (7) 修改错误：针对Massage-Compiler窗口所提供的 信息修改电路文件，直到没有错误为止。 (8) 保存并编译：选取窗口菜单 File→Project→Save&Compile，即可进行编译，产生 nand2.sof烧写文件。
实验二 二输入与非门版图绘制
姓名:_ 谢小玲学号:_2011850038_ 实验日期:_2014.4.3与非门版图绘制一、实验目的利用candence软件绘制与非门版图二、实验内容1、熟悉cadence 定制设计软件平台的基本界面与使用、设计文件组织式；2、了解工艺文件、版图设计等的大致概念，熟悉cadence 软件版图设计相关的功能；3、绘制与非门版图。
三、实验方案及流程图（一）版图绘制前的准备工作1、启动VMware、CentOS虚拟机，将display.drf和csmc0p6um.tf拷贝到bt1138下的exp 目录下，然后打开终端窗口。
2、在终端窗口输入以下命令：cd bt1138/exp/icfb出现的主窗口如图所示3、建立工艺库（1）点击File→New→Library，在随后出现的New Library设置窗口中确定Compile a new techfile 被选中，然后“Name”栏输入工艺库的名字为csmc_tf，然后点OK ；（2）在随后出现的对话框中ASCII Technology File 一项中输入 csmc0p6um.tf，然后点击“OK ”，会出现一个信息窗口，提示已经成功建立工艺库；4、建立设计库（1）主窗口中File→New→Library，会出现New Library 设置窗口，确定“Attach to an existing techfile”选项被选中，库名“Name”设定为“test1”，然后点击“OK”。
（2）在随后弹出设置Technology 库的窗口，选中csmc_tf，然后点击“OK”。
（3）File→New→cell view，在弹出的的窗口中Library Name 为test1，Cell Name输入andnot,通过下面的下拉菜单选中Virtuoso，View Name则会自动变为“layout”，然后点击“OK”，会自动打开出两个窗口：annot的layout编辑窗口，以及LSW窗口。
与非门、或非门和异或门的版图设计
实验四：与非门和或非门的版图设计、异或门的后仿真一、实验目的1、使用virtuoso layout XL工具创建或非门（NOR）和与非门（NAND）的电路原理图和版图；2、利用已创建好的或非门、与非门和反相器设计异或门（XOR）的电路原理图；3、对异或门提取的参数进行模拟仿真。
二、实验要求1、打印出由或非门、与非门和反相器设计成的异或门的仿真结果；2、打印出异或门的电路原理图和版图。
三、实验工具Virtuoso四、实验内容1、或非门的设计；2、与非门的设计；3、异或门的设计；4、异或门的仿真。
1、或非门的设计step1:创建或非门的电路原理图，其中，NMOS的宽度120nm为PMOS的宽度为480nm.图1 或非门的电路原理图step2:验证或非门是否可以正常工作，即创建SPICE netlist.图2 验证或非门图3验证成功产生的报告step3：创建一个layout view，并选择菜单栏上Tools->Lyaout XL，此时刚刚保存的电路原理图会自动弹出来，接着选择菜单栏上的Connectivity->Updata->Components and Nets,在弹出得对话框中修改参数，修改完成后点击OK，将会出现如下图所示布局。
图4 利用virtuoso XL工具生成的布局step4:参照前面的实验，在矩形边框内画上电源轨道和NWELL，并创建M1_PSUB 和MI_NWELL，将vdd!、gnd!移至电源轨道上，再将其他原件也移至矩形边框内。
对照电路原理图将NMOS、PMOS、电源、地、以及输入输出端口连接起来，在连线时，注意观察电路原理图，确保不会出现短路情况，连接好的版图如下图所示。
图5 连接好的或非门版图step5：对画好的版图进行DRC，成功后验证提取参数并做LVS验证，再生成网表文件。
图6 或非门版图的DRC验证图7 或非门的参数提取视图图8 或非门的LVS验证图9 或非门的网表文件2、与非门的设计与或非门的设计类似，在此不再赘述，直接给出与非门的电路原理图、版图以及DRC、LVS验证。
输入与非门、或非门版图设计
课程名称Course 集成电路设计技术项目名称Item二输入与非门、或非门版图设计与非门电路的版图：.spc文件（瞬时分析）：* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;* TDB File: E:\cmos\yufeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext * Extract Date and Time: 05/25/2011 - 10:03.include H:\ml2_125.mdVPower VDD GND 5va A GND PULSE (0 5 0 5n 5n 100n 200n)vb B GND PULSE (0 5 0 5n 5n 50n 100n).tran 1n 400n.print tran v(A) v(B) v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Pad Comment>* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6.5)* 4 = F (42.5,6.5)* 6 = GND (25,-22)M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u* M1 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u* M2 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)M3 F B 5 GND NMOS L=2u W=9.5u AD=52.25p PD=30u AS=57p PS=31u * M3 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)M4 5 A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=52.25p PS=30u * M4 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END与非门电路仿真波形图（瞬时分析）：.spc文件（直流分析）：* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;* TDB File: E:\cmos\yufeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext * Extract Date and Time: 05/25/2011 - 10:03.include H:\ml2_125.mdVPower VDD GND 5va A GND 5vb B GND 5.dc va 0 5 0.02 vb 0 5 0.02.print dc v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Pad Comment>* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6.5)* 4 = F (42.5,6.5)* 6 = GND (25,-22)M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u* M1 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u* M2 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)M3 F B 5 GND NMOS L=2u W=9.5u AD=52.25p PD=30u AS=57p PS=31u * M3 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)M4 5 A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=52.25p PS=30u * M4 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END与非门电路仿真波形图（直流分析）：或非门电路的版图：.spc文件（瞬时分析）：* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;* TDB File: E:\cmos\huofeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext * Extract Date and Time: 05/25/2011 - 10:04.include H:\CMOS\ml2_125.mdVPower VDD GND 5va A GND PULSE (0 5 0 5n 5n 100n 200n)vb B GND PULSE (0 5 0 5n 5n 50n 100n).tran 1n 400n.print tran v(A) v(B) v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <Pad Comment>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6)* 4 = F (42.5,6.5)* 5 = GND (25,-22)M1 6 A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=49.5p PS=29u* M1 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)M2 F B 6 VDD PMOS L=2u W=9u AD=49.5p PD=29u AS=54p PS=30u* M2 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)M3 F A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=104.5p PS=60u* M3 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)M4 GND B F GND NMOS L=2u W=9.5u AD=104.5p PD=60u AS=57p PS=31u* M4 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END或非门电路仿真波形图（瞬时分析）：.spc文件（直流分析）：* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;* TDB File: E:\cmos\huofeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext* Extract Date and Time: 05/25/2011 - 10:04.include H:\CMOS\ml2_125.mdVPower VDD GND 5va A GND 5vb B GND 5.dc va 0 5 0.02 vb 0 5 0.02.print dc v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <Pad Comment>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6)* 4 = F (42.5,6.5)* 5 = GND (25,-22)M1 6 A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=49.5p PS=29u* M1 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)M2 F B 6 VDD PMOS L=2u W=9u AD=49.5p PD=29u AS=54p PS=30u* M2 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)M3 F A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=104.5p PS=60u * M3 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)M4 GND B F GND NMOS L=2u W=9.5u AD=104.5p PD=60u AS=57p PS=31u * M4 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END或非门电路仿真波形图（直流分析）：课程名称Course集成电路设计技术项目名称Item二输入与非门、或非门版图设计目的Objective 1. 掌握利用E-EDIT进行IC设计方法，设计二输入与非门版图并仿真2. 掌握利用L-EDIT进行IC设计方法，设计二输入或非门版图并仿真3. 领会并掌握版图设计最优化实现方法。
二输入端与非门设计
二输入端与非门设计
二输入端与非门是一种基本的逻辑门电路，用于将输入的逻辑信号进行反转。
它由两个输入端和一个输出端组成，当两个输入信号中的任意一个为高电平时，输出信号为低电平；只有当两个输入信号都为低电平时，输出信号才会为高电平。
1.原理
在二输入端与非门中，当输入信号的两个输入端之一或者同时为高电平时，输入电阻将会导通，将电流流向负载电阻，并将输出线上的电压拉低，表示低电平。
当输入信号两个输入端都为低电平时，两个输入电阻都截止，负载电阻上没有电流流过，输出线上的电压被拉高，表示高电平。
2.设计
首先，选择一个适合的晶体管，常用的有NPN型和PNP型晶体管。
在这里，我们选择一个NPN型晶体管。
接下来，连接两个输入端。
一个输入端通过电阻接到电源电压（Vcc），另一个输入端通过电阻接到地线，同时这两个输入端也与晶体管的基极连接。
然后，将晶体管的发射极接地，集电极与输出端相连接。
负载电阻连接在输出端到电源电压（Vcc）之间。
最后，根据需要添加外部电路。
例如，可以添加降噪电路、电流限制电路等。
3.工作原理
当输入信号的两个输入端之一或者同时为高电平时，输入电阻导通，晶体管的基极-发射极之间的电压使得晶体管导通，导通时的饱和电压使得输出端电压拉低，表示低电平。
当输入信号的两个输入端都为低电平时，两个输入电阻截止，晶体管的基极-发射极之间的电压使得晶体管截止，输出端上的电压由于负载电阻拉高，表示高电平。
总结：。
2、3、4输入或非门版图设计
《集成电路工艺与版图设计》课堂作业班级：电子科学与技术01班姓名：曾海学号：201031722、3、4输入异或门版图设计如下：一、二输入异或门：（1）原理图：<2>L-edit中进行设计的如下二输入或非门版图<3>提取后在T-SPICE中进行参数及输入输出设置如下:VA A GND BIT ({1011} pw=20N lt=10N ht=10N on=5 off=0)VB B GND BIT ({0010} pw=20N lt=10N ht=10N on=5 off=0)Vdd Vdd GND 5.tran 10N 100N.print tran v(OUT) v(A) v(B)<4>在W-EDIT中得到仿真波形图：二、三输入或非门<1>三输入异或门版图<3>参数及输入输出设置VA A GND BIT ({1011} pw=20N lt=10N ht=10N on=5 off=0) VB B GND BIT ({0010} pw=20N lt=10N ht=10N on=5 off=0)Vdd Vdd GND 5.tran 10N 100N.print tran v(OUT) v(A) v(B)<3>仿真图三、四输入或非门<1>版图设计<2>参数及输入输设置Vdd Vdd GND 5VA A GND BIT ({1001} pw=20N lt=10N ht=10N on=5 off= 0)VB B GND BIT ({1010} pw=20N lt=10N ht=10N on=5 off= 0)VC C GND BIT ({1011} pw=20N lt=10N ht=10N on=5 off= 0)VD D GND BIT ({1011} pw=20N lt=10N ht=10N on=5 off= 0).tran 20N 100N.print tran v(OUT) v(A) v(B) v(C) v(D)<3>仿真图4、版图设计总结（1）本次设计中，由仿真图可以看出，仿真波形不是标准的方波图形，而是有相应的误差，可能是由于版图的设计中，布线或器件的放置不合理导致的。
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课程名称Course 集成电路设计技术项目名称Item二输入与非门、或非门版图设计与非门电路的版图：.spc文件（瞬时分析）：* Circuit Extracted by Tanner Research's L-Edit / Extract ;* TDB File: E:\cmos\yufeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\ * Extract Date and Time: 05/25/2011 - 10:03.include H:\VPower VDD GND 5va A GND PULSE (0 5 0 5n 5n 100n 200n)vb B GND PULSE (0 5 0 5n 5n 50n 100n).tran 1n 400n.print tran v(A) v(B) v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Pad Comment>* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A ,* 3 = B ,* 4 = F ,* 6 = GND (25,-22)M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u * M1 DRAIN GATE SOURCE BULKM2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u * M2 DRAIN GATE SOURCE BULKM3 F B 5 GND NMOS L=2u W= AD= PD=30u AS=57p PS=31u* M3 DRAIN GATE SOURCE BULK -18M4 5 A GND GND NMOS L=2u W= AD=57p PD=31u AS= PS=30u* M4 DRAIN GATE SOURCE BULK -18* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END与非门电路仿真波形图（瞬时分析）：.spc文件（直流分析）：* Circuit Extracted by Tanner Research's L-Edit / Extract ;* TDB File: E:\cmos\yufeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\ * Extract Date and Time: 05/25/2011 - 10:03.include H:\VPower VDD GND 5va A GND 5vb B GND 5.dc va 0 5 vb 0 5.print dc v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Pad Comment>* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A ,* 3 = B ,* 4 = F ,* 6 = GND (25,-22)M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u * M1 DRAIN GATE SOURCE BULKM2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u * M2 DRAIN GATE SOURCE BULKM3 F B 5 GND NMOS L=2u W= AD= PD=30u AS=57p PS=31u* M3 DRAIN GATE SOURCE BULK -18M4 5 A GND GND NMOS L=2u W= AD=57p PD=31u AS= PS=30u* M4 DRAIN GATE SOURCE BULK -18* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END与非门电路仿真波形图（直流分析）：或非门电路的版图：.spc文件（瞬时分析）：* Circuit Extracted by Tanner Research's L-Edit / Extract ;* TDB File: E:\cmos\huofeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\* Extract Date and Time: 05/25/2011 - 10:04.include H:\CMOS\VPower VDD GND 5va A GND PULSE (0 5 0 5n 5n 100n 200n)vb B GND PULSE (0 5 0 5n 5n 50n 100n).tran 1n 400n.print tran v(A) v(B) v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <Pad Comment>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A ,* 3 = B ,6)* 4 = F ,* 5 = GND (25,-22)M1 6 A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS= PS=29u * M1 DRAIN GATE SOURCE BULKM2 F B 6 VDD PMOS L=2u W=9u AD= PD=29u AS=54p PS=30u* M2 DRAIN GATE SOURCE BULKM3 F A GND GND NMOS L=2u W= AD=57p PD=31u AS= PS=60u * M3 DRAIN GATE SOURCE BULK -18M4 GND B F GND NMOS L=2u W= AD= PD=60u AS=57p PS=31u * M4 DRAIN GATE SOURCE BULK -18* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END或非门电路仿真波形图（瞬时分析）：.spc文件（直流分析）：* Circuit Extracted by Tanner Research's L-Edit / Extract ;* TDB File: E:\cmos\huofeimen, Cell: Cell0* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\ * Extract Date and Time: 05/25/2011 - 10:04.include H:\CMOS\VPower VDD GND 5va A GND 5vb B GND 5.dc va 0 5 vb 0 5.print dc v(F)* WARNING: Layers with Unassigned AREA Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <P Base Resistor>* WARNING: Layers with Unassigned FRINGE Capacitance.* <Poly Resistor>* <Poly2 Resistor>* <N Diff Resistor>* <P Diff Resistor>* <N Well Resistor>* <Pad Comment>* <P Base Resistor>* <Poly1-Poly2 Capacitor>* WARNING: Layers with Zero Resistance.* <Pad Comment>* <Poly1-Poly2 Capacitor>* <NMOS Capacitor>* <PMOS Capacitor>* NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A ,* 3 = B ,6)* 4 = F ,* 5 = GND (25,-22)M1 6 A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS= PS=29u * M1 DRAIN GATE SOURCE BULKM2 F B 6 VDD PMOS L=2u W=9u AD= PD=29u AS=54p PS=30u* M2 DRAIN GATE SOURCE BULKM3 F A GND GND NMOS L=2u W= AD=57p PD=31u AS= PS=60u * M3 DRAIN GATE SOURCE BULK -18M4 GND B F GND NMOS L=2u W= AD= PD=60u AS=57p PS=31u * M4 DRAIN GATE SOURCE BULK -18* Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END或非门电路仿真波形图（直流分析）：课程名称Course集成电路设计技术项目名称Item二输入与非门、或非门版图设计目的Objective 1. 掌握利用E-EDIT进行IC设计方法，设计二输入与非门版图并仿真2. 掌握利用L-EDIT进行IC设计方法，设计二输入或非门版图并仿真3. 领会并掌握版图设计最优化实现方法。