二输入与非门、或非门版图设计

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课程名称Course 集成电路设计技术

项目名称

Item

二输入与非门、或非门版图设

与非门电路的版图:

.spc文件(瞬时分析):

* Circuit Extracted by Tanner Research's L-Edit / Extract ;

* TDB File: E:\cmos\yufeimen, Cell: Cell0

* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\ * Extract Date and Time: 05/25/2011 - 10:03

.include H:\

VPower VDD GND 5

va A GND PULSE (0 5 0 5n 5n 100n 200n)

vb B GND PULSE (0 5 0 5n 5n 50n 100n)

.tran 1n 400n

.print tran v(A) v(B) v(F)

* WARNING: Layers with Unassigned AREA Capacitance.

*

*

*

*

*

*

* WARNING: Layers with Unassigned FRINGE Capacitance.

*

*

*

*

*

*

*

*

* WARNING: Layers with Zero Resistance.

*

*

*

*

* NODE NAME ALIASES

* 1 = VDD (34,37)

* 2 = A ,

* 3 = B ,

* 4 = F ,

* 6 = GND (25,-22)

M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u * M1 DRAIN GATE SOURCE BULK

M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u * M2 DRAIN GATE SOURCE BULK

M3 F B 5 GND NMOS L=2u W= AD= PD=30u AS=57p PS=31u

* M3 DRAIN GATE SOURCE BULK -18

M4 5 A GND GND NMOS L=2u W= AD=57p PD=31u AS= PS=30u

* M4 DRAIN GATE SOURCE BULK -18

* Total Nodes: 6

* Total Elements: 4

* Extract Elapsed Time: 0 seconds

.END

与非门电路仿真波形图(瞬时分析):

.spc文件(直流分析):

* Circuit Extracted by Tanner Research's L-Edit / Extract ;

* TDB File: E:\cmos\yufeimen, Cell: Cell0

* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\ * Extract Date and Time: 05/25/2011 - 10:03

.include H:\

VPower VDD GND 5

va A GND 5

vb B GND 5

.dc va 0 5 vb 0 5

.print dc v(F)

* WARNING: Layers with Unassigned AREA Capacitance.

*

*

*

*

*

*

* WARNING: Layers with Unassigned FRINGE Capacitance.

*

*

*

*

*

*

*

*

* WARNING: Layers with Zero Resistance.

*

*

*

*

* NODE NAME ALIASES

* 1 = VDD (34,37)

* 2 = A ,

* 3 = B ,

* 4 = F ,

* 6 = GND (25,-22)

M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u * M1 DRAIN GATE SOURCE BULK

M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u * M2 DRAIN GATE SOURCE BULK

M3 F B 5 GND NMOS L=2u W= AD= PD=30u AS=57p PS=31u

* M3 DRAIN GATE SOURCE BULK -18

M4 5 A GND GND NMOS L=2u W= AD=57p PD=31u AS= PS=30u

* M4 DRAIN GATE SOURCE BULK -18

* Total Nodes: 6

* Total Elements: 4

* Extract Elapsed Time: 0 seconds

.END

与非门电路仿真波形图(直流分析):

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