硅热氧化工艺

In the integrated circuit technology, high pure water as steam heating source, and with dry wet oxidation is oxygen oxygen through the heating water (commonly used water temperature for 95) by the formation of the oxygen and water vapor mixture formation oxidation atmosphere. With high purity hydrogen and oxygen in quartz tube inlet reaction direct synthesis methods of water vapour water vapor oxidation, by changing the ratio of hydrogen and oxygen, can regulate steam pressure, reduce contamination, help to improve the quality of the silica thermal growth.
硅热氧化工艺，按所用的氧化气氛 可分为：干氧氧化、水汽氧化和湿 氧氧化。干氧氧化是以干燥纯净的 氧气作为氧化气氛，在高温下氧直 接与硅反应生成二氧化硅。水汽氧 化是以高纯水蒸汽为氧化气氛，由 硅片表面的硅原子和水分子反应生 成二氧化硅。水汽氧化的氧化速率 比干氧氧化的为大。而湿氧氧化实 质上是干氧氧化和水汽氧化的混合， 氧化速率介于二者之间。
余明刚 唐波 张芊
硅热氧化工艺
硅(Si)与含有氧化物质的气体，例如水汽 和氧气在高温下进行化学反应，而在硅 片表面产生一层致密的二氧化硅(SiO2) 薄膜。这是硅平面技术中一项重要的工 艺。常用的热氧化装置（图1）将硅片置 于用石英玻璃制成的反应管中，反应管 用电阻丝加热炉加热一定温度(常用的温
度为900～1200℃，在特殊条件下可降到 600℃以下)，氧气或水汽通反应管
（典型的气流速度为1厘米/秒）时，在 硅片表面发生化学反应
生成SiO2层，其厚度一般在几十埃到上 万埃之间。
Si(固态)+O2(气态)→SiO2(固态) 或 Si(固态)+2H2O(汽态)→SiO2(固 态)+2H2(气态)
Silicon (Si) and contains oxide qualitative gases, such as water and oxygen for chemical reaction under high temperature, and in silicon wafer surface produces a layer of density of silica (SiO2) film. This is an important silicon flat technology process. The commonly used thermal oxidation device (figure 1) will be in use silicon quartz glass tube made in response, reaction furnace heating must work resistance wire temperature (commonly used temperature of 900 ~ 1200 ℃, under special conditions can drop to 600 ℃ below), oxygen or water vapour through the reaction tube (typical flow speed of 1 cm/SEC), silicon wafer surface in produces chemical reaction Generate SiO2 layer, the thickness of the general's dozens to tens of thousands between Evans.
Silicon thermal oxidation technology, used by the oxidation atmosphere can be divided into: dry oxygen oxidation, water vapor oxidation and the wet oxidation of oxygen. Dry oxygen oxidation is pure oxygen as dry oxidation atmosphere, under high temperature to oxygen reacts directly with silicon silica. Steam oxidation is high purity steam oxidation atmosphere for, the silicon wafer surface silicon atom and a water molecule reaction generated silica. The oxidation of the water vapor oxidation rate than dry oxygen oxidation of great. And wet oxidation is essentially dry oxygen oxygenation and water vapor oxidation of mixed, oxidation rate between between the two.
在集成电路工艺中，以加热高纯 水作为水蒸汽源，而湿氧氧化则 用干燥氧气通过加热的水（常用 水温为95）所形成的氧和水汽混 合物形成氧化气氛。用高纯氢气 和氧气在石英反应管进口处直接 合成水蒸汽的方法进行水汽氧化 时，通过改变氢气和氧气的比例， 可以调节水蒸汽压，减少沾污， 有助于提高热生长二氧化硅的质 量。