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Modelling, simulation, and visualisation together create the third branch of human knowledge
on equal footing with theory and experiment. Model-Driven Development (MDD) has been proposed as a means to support the software development process through the use of a
model-centric approach. The objective of this paper is to address the design of an architecture for scientific application that may execute as multithreaded computations, as
well as implementations of the related shared data structures.
New version program summary
Program title: Growth09
Catalogue identifier: ADVL_v3_0
Program summary URL: /summaries/ADVL_v3_0.html
Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland
Licensing provisions: Standard CPC licence, /licence/licence.html
No. of lines in distributed program, including test data, etc.: 30 940
No. of bytes in distributed program, including test data, etc.: 3 119 488
Distribution format: tar.gz
Programming language: Embarcadero Delphi
Computer: Intel Core Duo-based PC
Operating system: Windows XP, Vista, 7
RAM: more than 1 GB
Classification: 4.3, 7.2, 6.2, 8, 14
Purchase $ 31.50
Catalogue identifier of previous version: ADVL_v2_1
Journal reference of previous version: Comput. Phys. Comm. 180 (2009) 1219
Subprograms used:
Does the new version supersede the previous version?: No
Nature of problem: Molecular beam epitaxy (MBE) is a technique for epitaxial growth via the interaction of one or several molecular or atomic beams that occurs on a surface of a heated crystalline substrate. Reflection high-energy electron diffraction (RHEED) is an important in situ analysis technique, which is capable of giving quantitative information about the growth process of thin films and its control. The analysis of RHEED intensity oscillations has two purposes. One is to control the film growth, and the other is to understand the mechanism of the film growth using the MBE through the analysis of surface morphology as a function of time. Such control allows the development of structures where the electrons can be confined in space, giving quantum wells or even quantum dots. Such layers are now a critical part of 3 many modern semiconductor devices, semiconductor lasers, light-emitting diodes and new devices for the magnetic storage industry.
Solution method: The present paper reports a practical and pragmatic approach for MDD technology [1] that has been used during design of the Growth09 program. Growth09 is a numerical model that uses multithreaded and partially nested transactions for simulation of epitaxial growth of thin films.
Reasons for new version: Responding to user feedback the program has been upgraded to a standard that allows a slave process, carrying out computations of the RHEED intensities for a disordered surface, to be run. Also, functionality and documentation of the program have been improved.
Summary of revisions:
1. The MDD technology has been used to design a computer model that allows the user to