不同形貌氧化锌的制备方法

Application
Core–shell ZnO@ZnO QDs/C NRAs
Anodization Hierarchical 3D ZnO nanowire structures
lithium-ion batteries anode material
dyesensitized solar cells and photocatalysis
References
• Wu Q, Chen X, Zhang P, et al. Amino acid-assisted synthesis of ZnO hierarchical architectures and their novel photocatalytic activities[J]. Crystal Growth and Design, 2008, 8(8): 3010-3018. • Duan Y, Han L, Zhang J, et al. Optically Active Nanostructured ZnO Films[J]. Angewandte Chemie International Edition, 2015, 54(50): 15170-15175. • Faria J C D, Campbell A J, McLachlan M A. ZnO Nanorod Arrays as Electron Injection Layers for Efficient Organic Light Emitting Diodes[J]. Advanced Functional Materials, 2015, 25(29): 4657-4663. • Zhang G, Hou S, Zhang H, et al. High‐Performance and Ultra‐Stable Lithium‐Ion Batteries Based on MOF‐Derived ZnO@ ZnO Quantum Dots/C Core–Shell Nanorod Arrays on a Carbon Cloth Anode[J]. Advanced Materials, 2015, 27(14): 2400-2405. • Miles D O, Cameron P J, Mattia D. Hierarchical 3D ZnO nanowire structures via fast anodization of zinc[J]. Journal of Materials Chemistry A, 2015, 3(34): 17569-17577. • Kokotov M, Hodes G. Reliable chemical bath deposition of ZnO films with controllable morphology from ethanolamine-based solutions using KMnO 4 substrate activation[J]. Journal of Materials Chemistry, 2009, 19(23): 38473854.
2.2 Amino acid-induced self-assembly
Step1：Substrate activation
The quartz wafers were sequentially rinsed with a mixture of acetone and alcohol (V/V=1:1) and deionised water in an ultrasonic bath the substrates were placed in glass vials filled with 20 mL of 0.04-10 mM fresh KMnO4 solution and 50 μL of n-butanol (as a reducing agent for the KMnO4 ) at 85°C for 15-20 min. Permanganate-treated quartz wafers were then thoroughly rinsed in deionised water and sonicated for 10 min.
2.5 Synthesis of ZnO nanowire by anodization
1.Pretreatment:
annealed、degreasing、electropolished
2.Electrochemical anodization：
anode 、cathode 、 electrolyte
The quartz wafers
Mn-(hydroxy)-oxide
M. Kokotov, G. Hodes, J. Mater. Chem. 2009, 19, 3847 – 3854
Step2：Synthesis of CNZFs

2 mmol methionine was dissolved in 25 mL of deionised water with stirring 3 mmol Zn(CH3COO)2 was added to obtain a homogeneous solution addition of 1 mmol ammonium carbonate and stirring for 60 min the mixture and activated quartz wafer were transferred into 50-mL Teflon-lined autoclaves to react under static conditions at 120 ℃ for 1 hour The quartz wafers coated with HZC were washed with deionised water and absolute ethanol several times to remove the unreacted reactants and powder and then dried at 80 ℃for 12 h. Finally, CNZFs were obtained by calcination at 550 ℃ in air for 6 h.
2.1 Amino Acid-Assisted Synthesis of ZnO
Zn(CH3COO)2 histidinec Mixed solution NaOH dropwise
Zn(CH3COO)2 ·2H2O + histidinec + NaOH
150 ℃ for 10 h precipitate centrifugation dried in air at 60 ℃for 4 h. Wu Q, Chen X, Zhang P, et al.Crystal Growth and Design, 2008, 8(8): 3010-3018.
solvent of DMF/H2O
2-methylimidazole
sonication
carbon cloth with the ZnO nanorods oven 70°C×24h
white product
wash (DMF and ethanol) anneal (650 °C in N2) G. Zhang, S. Hou, H. Zhang, W. Zeng, F. Yan, C. C. Li, H. Duan, Adv Mater 2015, 27, 2400.
2.3 ZnO nanorod arrays as electron injection layers
Spin coating Synthetic process
zinc acetate dihydrate and 2-aminoethanol dissolved in 2-methoxyethanol. spin coating onto ITO，annealed for 10 min at 300 ℃. This spin-anneal step would be repeated three times. undergo a final 450 ℃ anneal for 1 h.
reaction
750 nm ZnO NRA in vertical length
HMT：hexamethylenetetramine PEI：polyethyleneimine
J. C. D. Faria , A. J. Campbell , M. A. McLachlan ,Adv. Funct. Mater. 2015 , 25 , 4657 .
Amino Acid-Assisted Synthesis of ZnO Hydro-thermal method
Amino acid-induced selfassemblyNanostructured ZnO Films ZnO nanorod arrays optics, optoelectronics, sensors,actuators, energy applications, spintronics photovoltaic device,such as LED, Solar cells
2.2 Amino acid-induced self-assembly
L-methionine
first
D-methionine
Kokotov M, Hodes G. Journal of Materials Chemistry, 2009, 19(23): 3847-3854.
Duan Y, Han L, Zhang J, et al. 2015, 54(50): 15170-15175.
• 3 Part
Summary
1.Introduction
Zinc oxide has the strict crystallography of polarity, high melting point ( 1975℃ ), is a kind of wide band gap semiconductor material, the band gap of about 3.3eV at room temperature, the exciton binding energy as high as 60meV and morphology of nano - zinc oxide - rich, diverse surface orientation.
anneal
repeate 3 times
130 nm ZnO seed layer
anneal Hydrothermal growth
suspended in a solution of zinc nitrate hexahydrate and HMT, KCl and PEI. The reaction proceed for 2 h at 95 ℃ to reach the serried NR length.
further modifications
Miles D O, Cameron P J, Mattia D.Journal of Materials Chemistry A, 2015, 3(34): 17569-17577.
3.Summary
Description Technique or Morphology
3. Annealing treatment & Modificatwk.baidu.comon
2.5 Synthesis of ZnO nanowire by anodization
Initiation of nanowire growth
Formation of aligned nanowire films
Layered growth
2.4 Core–shell ZnO@ZnO QDs/C NRAs
preparation of ZnO NRAs（a、b）: ZnO NRAs were grown on carbon clothed by a modified wet chemical route
Synthesis of the Core–Shell ZnO@ZnO QDs/C NRAs :
The Preparation of Zinc Oxide
Reporter：唐海娣 Teams： 张梦榕、刘晶晶、刘凡凡、鲁健 刘柳、宋雪洋、李京京、胡婷婷 刘欢、李言、靳宗梓、江晨辉
Main Content
Part 1
Introduction Preparation of zinc oxide
Part 2